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EMF22 / UMF22N
Transistors
Power management (dual transistors)
EMF22 / UMF22N
2SC5585 and DTC114E are housed independently in a EMT6 or UMT6 package. External dimensions (Units : mm) Application Power management circuit
EMF22
0.22
(4) (5) (6) (3) (2)
Features 1) Power switching circuit in a single package. 2) Mounting cost and area can be cut in half.
ROHM : EMT6
1.2 1.6
(1)
0.13
Each lead has same dimensions
Abbreviated symbol : F22
(4)
Structure Silicon epitaxial planar transistor
UMF22N
0.65 1.3 0.65 0.7 0.9
(3)
0.5
0.5 0.5 1.0 1.6
0.2
(6)
Equivalent circuits
(3) (2) (1)
1.25 2.1
0.15
0.1Min.
DTr2 R2
(4)
R1
Tr1
0 to 0.1
ROHM : UMT6 EIAJ : SC-88
(5) R1=10k R2=10k (6)
Abbreviated symbol :F22
Packaging specifications
Type Package Marking Code Basic ordering unit(pieces)
EMF22 EMT6 F22 T2R 8000
UMF22N UMT6 F22 TR 3000
(1)
Each lead has same dimensions
2.0
(5)
(2)
1/4
EMF22 / UMF22N
Transistors
Absolute maximum ratings (Ta=25C) Tr1
Limits Symbol 15 VCBO VCEO 12 VEBO 6 IC 500 Collector current ICP 1.0 PC 150(TOTAL) Power dissipation Tj 150 Junction temperature Tstg -55~+150 Range of storage temperature Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage
1 Single pulse PW=1ms 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Unit V V V mA A mW C C
1 2
DTr2
Parameter Supply voltage Input voltage Collector current Output current Power dissipation Junction temperature Range of storage temperature Limits Symbol 50 VCC -10~+40 VIN 100 IC 50 IO 150(TOTAL) PC Tj 150 Tstg -55~+150 Unit V V mA mA mW C C
1 2
1 Characteristics of built-in transistor. 2 120mW per element must not be exceeded. Each terminal mounted on a recommended land.
Electrical characteristics (Ta=25C) Tr1
Parameter Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Symbol BVCEO BVCBO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 12 15 6 - - - 270 - - Typ. - - - - - 90 - 320 7.5 Max. - - - 100 100 250 680 - - Unit V V V nA nA mV - MHz pF Conditions IC=1mA IC=10A IE=10A VCB=15V VEB=6V IC=200mA, IB=10mA VCE=2V, IC=10mA VCE=2V, IE=-10mA, f=100MHz VCB=10V, IE=0mA, f=1MHz
DTr2
Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Transition frequency
Transition frequency of the device
Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT
Min. - 3 - - - 30 7 0.8 -
Typ. - - 0.1 - - - 10 1 250
Max. 0.5 - 0.3 0.88 0.5 - 13 1.2 -
Unit V V mA A - k - MHz
Conditions VCC=5V, IO=100A VO=0.3V, IO=10mA IO/II=10mA/0.5mA VI=5V VCC=50V, VI=0V VO=5V, IO=5mA - - VCE=10V, IE=-5mA, f=100MHz
2/4
EMF22 / UMF22N
Transistors
Electrical characteristic curves Tr1
1000
COLLECTOR CURRENT : IC (mA)
VCE=2V Pulsed
DC CURRENT GAIN : hFE
1000
Ta=125C Ta=25C Ta=-40C
COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV)
1000 Ta=25C Pulsed
VCE=2V Pulsed
100
100
100
5C
Ta= -40 C
Ta=25 C
10
Ta=12
IC/IB=50
10
10
IC/IB=20 IC/IB=10
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
1
10
100
1000
1
1
10
100
1000
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
Fig.1 Grounded emitter propagation characteristics
Fig.2 DC current gain vs.
Fig.3 Collector-emitter saturation voltage
collector current
vs. collector current ( )
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
BASER SATURATION VOLTAGE : VBE (sat) (mV)
1000 IC/IB=20 Pulsed
10000
100
Ta=125C
1000
Ta=25C
Ta=-40C
TRANSITION FREQUENCY : fT (MHz)
IC/IB=20 Pulsed
1000
VCE=2V Ta=25C Pulsed
100
Ta=25C Ta=-40C
Ta=125C
10
100
10
1
1
10
100
1000
10
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : IC (mA)
EMITTER CURRENT : IE (mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( )
Fig.5 Base-emitter saturation voltage
Fig.6 Gain bandwidth product
vs. collector current
vs. emitter current
EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
1000 IE=0A f=1MHz Ta=25C 100
Cib 10 Cob
1 0.1
1
10
100
EMITTER TO BASE VOLTAGE : VEB(V)
Fig.7 Collector output capacitance
vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage
3/4
EMF22 / UMF22N
Transistors
DTr2
100 50
OUTPUT CURRENT : Io (A)
INPUT VOLTAGE : VI(on) (V)
VO=0.3V
10m 5m 2m 1m 500 200 100 50 20 10 5 2 1 0 Ta=100C 25C -40C
VCC=5V
1k 500
DC CURRENT GAIN : GI
VO=5V Ta=100C 25C -40C
20 10 5 2 1 500m 200m 100m 100 200 500 1m 2m 5m 10m 20m 50m 100m Ta=-40C 25C 100C
200 100 50 20 10 5 2
0.5
1.0
1.5
2.0
2.5
3.0
1 100 200 5001m 2m
5m 10m 20m 50m100m
OUTPUT CURRENT : IO (A)
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : IO (A)
Fig.1 Input voltage vs. output current (ON characteristics)
Fig.2 Output current vs. input voltage (OFF characteristics)
Fig.3 DC current gain vs. output current
1 500m
OUTPUT VOLTAGE : VO(on) (V)
lO/lI=20 Ta=100C 25C -40C
200m 100m 50m 20m 10m 5m 2m 1m 100 200 500 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : IO (A)
Fig.4 Output voltage vs. output current
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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